Eulitha’s Displacement Talbot Lithography (DTL) is an innovative and versatile nanofabrication technology that leverages the Talbot effect to create periodic nanostructures with unparalleled precision. The Talbot effect, a well-known optical phenomenon, describes the self-imaging process where a periodic pattern is reproduced at specific distances from the original object. By harnessing this effect, DTL allows for creating intricate nanostructures with high fidelity.

In a DTL exposure, a periodic mask is illuminated by a coherent light source, such as a laser. This illumination produces an interference pattern between the mask and substrate planes . During exposure, a substrate with photosensitive material displaces, or moves through the interference pattern, patterning the desired nanostructures with exceptional accuracy.

The large interference pattern between the mask and wafer planes translates to an effectively infinite depth of focus. This is particularly useful when patterning on topography, curved surfaces, or substrates that struggle with flatness.

Since there are no reduction optics, DTL has a large 1:1 mask to exposure field area. Meaning, a industry standard 6in mask would have a single exposure area of 140x 140mm2, excellent for patterning large-area devices seamlessly.

Interferrance based patterning also has benefits with very high pitch and design control as well as low LER structures.

Advantages of DTL Technology:

Low-cost, high-resolution patterning (~60nm min CD)

Large exposure fields

• 140mm x 140mm imageable area (with 6in standard mask)
• Seamless device printing
• No complex reduction/magnification optics

Very large depth of focus

• Patterning on surfaces that are non-planar, topography, curved, etc.
• Up to millimeters of DOF

Mask-locked design

• Tight pitch control (> 2 pm)
• Single-exposure design can have different patterns, pitches, duty cycles, and orientations

Reliable, repeatable patterning